Conference Proceedings

Second International Conference on Advances In Computing, Control And Networking - ACCN 2015

A Comparative Analysis of Performance Gain of 7- nm FinFET over Planer CMOS

Author(s) : JAMAL UDDIN AHMED, ASIF KHAN, MEHNAZ HAQ, SADMAN SHOUMIK KHAN, SARAH NAHAR CHOWDHURY

Abstract

FinFET has been contemplated as a seemly substitute for the conventional CMOS at the nano-scale regime owing to the projection for application in the integrated circuits fabrication due to its extraordinary properties like improved channel controllability, high ON/OFF current ratio and reduced short-channel effect. In this paper, circuit simulations of 7-nm FinFET and planer CMOS are comprehensively investigated showing a 34.92% and 28.79% increased drain current in 7-nm Fin-FET compared to the existing 22-nm and equivalent 7-nm planer CMOS respectively. A detailed simulation study evaluating the performance of the proposed design is presented exhibiting a 2X increase in drive strength with the increment of fins. Fin thickness of 2.725 nm along with a height of 10.9 nm has been used resulting in an 8X reduction in gate area which is the smallest 7-nm Fin-FET structure yet developed. The indiscriminate variations of the characteristics obtained in various simulations lead to a culmination of shifting to Fin-FET from planer CMOS which is imperative from the prospect of design and manufacture.

Conference Title : Second International Conference on Advances In Computing, Control And Networking - ACCN 2015
Conference Date(s) : 28-29 August, 2015
Place : Hotel Lebua at State Tower, Bangkok, Thailand
No fo Author(s) : 5
DOI : 10.15224/978-1-63248-073-6-14
Page(s) : 67 - 71
Electronic ISBN : 978-1-63248-073-6
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