Conference Proceedings

International Conference on Advances In Engineering And Technology - ICAET 2014

74V High Figure-of-Merit Lateral Trench Gate Power MOSFET on InGaAs

Author(s) : MUKESH BADIYARI, YASHVIR SINGH

Abstract

In this paper, a power lateral trench-gate metal oxide-semiconductor field-effect transistor (MOSFET) on InGaAs is proposed. The device consists of two gates placed vertically in separate trenches built in the drift region on both sides of P body region. Under ON-state, two channels are created in P-body which carry current simultaneously to enhance performance of the device. The trench structure of the proposed device causes reduced-surface-field effect in the drift region to improved breakdown voltage. The device design also provides a reduction in cell pitch and higher drift region doping to decrease the on-resistance. Two-dimensional numerical simulations are performed to analyze and compare the performance of proposed device with that of the conventional MOSFET. The proposed MOSFET structure gives 80% higher breakdown voltage, 17% lower specific on-resistance, 25% reduction in cell pitch and 3.8 times improvement in figure-of-merit over the conventional device.

Conference Title : International Conference on Advances In Engineering And Technology - ICAET 2014
Conference Date(s) : 24 - 25 May, 2014
Place : RIT, Roorkee, India
No fo Author(s) : 2
DOI : 10.15224/978-1-63248-028-6-02-30
Page(s) : 142 - 145
Electronic ISBN : 978-1-63248-028-6
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